Publication: High-Temperature Voltage and Current References in Silicon Carbide CMOS

Posted on Posted in Uncategorized
A great paper led by Ashfaq Rahman, PhD, U of A 2015 graduate of Prof. Mantooth’s, on design of voltage and current references in Silicon Carbide.
Rahman, A., Francis, A. M., Ahmed, S., Akula, S. K., Holmes, J., & Mantooth, A. (2016).
High-Temperature Voltage and Current References in Silicon Carbide CMOS.
IEEE Transactions on Electron Devices, 63(6), 2455–2461.
https://doi.org/10.1109/TED.2016.2550580