Publication: High-Temperature Voltage and Current References in Silicon Carbide CMOS

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A great paper led by Ashfaq Rahman, PhD, U of A 2015 graduate of Prof. Mantooth’s, on design of voltage and current references in Silicon Carbide. Rahman, A., Francis, A. M., Ahmed, S., Akula, S. K., Holmes, J., & Mantooth, A. (2016). High-Temperature Voltage and Current References in Silicon Carbide CMOS. IEEE Transactions on Electron […]

Publication/Conference: Aerospace 2015, SiC CMOS, SiGe

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Ozark IC’s work in design and qualification of silicon carbide technology was featured at the 2015 Aerospace Conference. Francis, A. M., Moudy, T., Holmes, J. A., Rahman, A., Barlow, M., Ahmed, S., & Mantooth, A. (2015). Towards standard component parts in silicon carbide CMOS. In 2015 IEEE Aerospace Conference (pp. 1–9). https://doi.org/10.1109/AERO.2015.7119291 Dr. Alan Mantooth, […]