Month: June 2016

A great paper led by Ashfaq Rahman, PhD, U of A 2015 graduate of Prof. Mantooth’s, on design of voltage and current references in Silicon Carbide. Rahman, A., Francis, A. M., Ahmed, S., Akula, S. K., Holmes, J., & Mantooth, A. (2016). High-Temperature Voltage and Current References in Silicon Carbide CMOS. IEEE Transactions on Electron Devices, 63(6), 2455–2461. https://doi.org/10.1109/TED.2016.2550580

A publication on the design and test of asynchronous silicon-carbide integrated circuits, led by U of A student Nathan Kuhns (student of Prof. Di) in the 2016 issue of  IEEE Transactions on Device and Materials Reliability. Kuhns, N., Caley, L., Rahman, A., Ahmed, S., Di, J., Mantooth, H. A., Francis, A.M, Holmes, J. (2016). Complex High-Temperature CMOS Silicon Carbide Digital Circuit Designs. IEEE Transactions on Device and Materials Reliability, 16(2), 105–111. https://doi.org/10.1109/TDMR.2016.2530664