Category: Publications

In the News, Publications

Ozark IC Quick Turn Additive Prototyping Featured in Advancing Microelectronics Magazine

Developing a new sensor, component, or system is complicated. While modeling and simulation inform your design, there is no substitute for a prototype tested in the relevant environment. To get there, Ozark IC is lowering the barrier to your system feasibility questions in Extreme Environments using unique additive technology. Featured recently in Advancing Microelectronics, our quick turn (QT) systems can go from idea to test in as little as 24 hours – a true game changer for rugged electronics. Learn more in the Power and High Temp issue of Advancing Microelectronics magazine: https://imaps.org/page/Advancing-Microelectronics-Magazine

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Publications

An Integrated SiC Photo-Transistor for Ultraviolet Detection in High-Temperature Environments

Jim Holmes, A. Matt Francis, Nicholas Chiolino, Matthew Barlow, Sonia Perez, Ian Getreu Ozark Integrated Circuits, Inc. Fayetteville, Arkansas, USA Email: holmes@ozarkic.com Article published in IEEE Sensor Applications Symposium (SAS), March 2019. Abstract— The work described herein applies a patented integrated silicon carbide (SiC) bipolar junction transistor (BJT) to the detection of ultraviolet (UV) light in situ for extreme-temperature environments. An integrated SiC BJT provides four important capabilities for UV detection in extreme environments: (1) The miniaturization of detectors and readout circuits through micron-scaled integrated circuit (IC) lithography; (2) the high-temperature operation of SiC ICs; (3) long-term reliability of SiC at high temperatures; and (4) the deep-UV responsivity of 4H-SiC. The design, manufacture and electrical characterization of a SiC photo-transistor […]

Publications, Research

SiC under pressure – best of session at IMAPS 2017

Dr. Matthew Barlow, Ozark IC Senior Engineer, was selected as “Best in Session” for his paper, “Operation of Silicon Carbide Integrated Circuits under High Temperature and Pressure.”  Congrats Matt! Abstract Silicon carbide integrated circuits have demonstrated the ability to function at temperatures as high as 600 ℃ for extended periods of time. Many environments where high temperature in-situ electronics are desired also have large pressures as well. While some validation has been done for high pressure environments, limited information on the parametric impact of pressure on SiC integrated circuits is available. This paper takes two leading-edge SiC integrated circuit processes using two different classes of devices (JFET and CMOS), and measures the performance through temperature and pressure variation. Circuit functionality […]

Publications

High Temperature Data Converters in Silicon Carbide CMOS

Congrats to Ashfaq Rahman (PhD student of Dr. Alan Mantooth), a member of the U of A/Ozark IC design team from the Building Innovation Capacity NSF collaboration on his new paper, “High Temperature Data Converters in Silicon Carbide CMOS,” that has been posted to the “Early Access” area on IEEEXplore! Rahman, A., Caley, L., Roy, S., Kuhns, N., Mantooth, A., Di, J., … Holmes, J. (2017). High Temperature Data Converters in Silicon Carbide CMOS. IEEE Transactions on Electron Devices, 64(4), 1426–1432. https://doi.org/10.1109/TED.2017.2665520

Publications

Extended High-Temperature Operation of Silicon Carbide CMOS Circuits for Venus Surface Application

Ozark IC’s work in Silicon Carbide CMOS integrated circuits was recently featured in the IMAPS Journal of Microelectronics and Electronic Packaging Extended High-Temperature Operation of Silicon Carbide CMOS Circuits for Venus Surface Application Journal of Microelectronics and Electronic Packaging, October 2016 Issue  A. Matthew Francis, Jim Holmes,Nick Chiolino,Ian Getreu, Matthew Barlow, Affan Abbasi, and H. Alan Mantooth

Publications

An Integrated SiC CMOS Gate Driver

A great article on the state of the art in silicon-carbide integrated circuit design for power electronics, presented by Prof. Mantooth’s U of A student (and now Ozark IC Engineer) Matthew Barlow at the 2016 IEEE Applied Power Electronics Conference. Barlow, M., Ahmed, S., Mantooth, H. A., & Francis, A. M. (2016). An integrated SiC CMOS gate driver. In 2016 IEEE Applied Power Electronics Conference and Exposition (APEC) (pp. 1646–1649). https://doi.org/10.1109/APEC.2016.7468087

Publications

High-Temperature Voltage and Current References in Silicon Carbide CMOS

A great paper led by Ashfaq Rahman, PhD, U of A 2015 graduate of Prof. Mantooth’s, on design of voltage and current references in Silicon Carbide. Rahman, A., Francis, A. M., Ahmed, S., Akula, S. K., Holmes, J., & Mantooth, A. (2016). High-Temperature Voltage and Current References in Silicon Carbide CMOS. IEEE Transactions on Electron Devices, 63(6), 2455–2461. https://doi.org/10.1109/TED.2016.2550580

Publications

Complex High-Temperature CMOS Silicon Carbide Digital Circuit Designs

A publication on the design and test of asynchronous silicon-carbide integrated circuits, led by U of A student Nathan Kuhns (student of Prof. Di) in the 2016 issue of  IEEE Transactions on Device and Materials Reliability. Kuhns, N., Caley, L., Rahman, A., Ahmed, S., Di, J., Mantooth, H. A., Francis, A.M, Holmes, J. (2016). Complex High-Temperature CMOS Silicon Carbide Digital Circuit Designs. IEEE Transactions on Device and Materials Reliability, 16(2), 105–111. https://doi.org/10.1109/TDMR.2016.2530664