Year: 2019

Jim Holmes, A. Matt Francis, Nicholas Chiolino, Matthew Barlow, Sonia Perez, Ian Getreu Ozark Integrated Circuits, Inc. Fayetteville, Arkansas, USA Email: holmes@ozarkic.com Article published in IEEE Sensor Applications Symposium (SAS), March 2019. Abstract— The work described herein applies a patented integrated silicon carbide (SiC) bipolar junction transistor (BJT) to the detection of ultraviolet (UV) light in situ for extreme-temperature environments. An integrated SiC BJT provides four important capabilities for UV detection in extreme environments: (1) The miniaturization of detectors and readout circuits through micron-scaled integrated circuit (IC) lithography; (2) the high-temperature operation of SiC ICs; (3) long-term reliability of SiC at high temperatures; and (4) the deep-UV responsivity of 4H-SiC. The design, manufacture and electrical characterization of a SiC photo-transistor […]