Year: 2015
Press: Ozark IC Venus-focused R&D Featured in EETimes
NASA Preps Venus ICs. Ozark IC to supply 932 degree PDK. R. Colin Johnson. 8/3/2015 09:50 AM ED
Aerospace 2015, SiC CMOS, SiGe
Ozark IC’s work in design and qualification of silicon carbide technology was featured at the 2015 Aerospace Conference. Francis, A. M., Moudy, T., Holmes, J. A., Rahman, A., Barlow, M., Ahmed, S., & Mantooth, A. (2015). Towards standard component parts in silicon carbide CMOS. In 2015 IEEE Aerospace Conference (pp. 1–9). https://doi.org/10.1109/AERO.2015.7119291 Dr. Alan Mantooth, of the University of Arkansas also presented a paper on SiC analog/mixed-signal designs done by student Ashfaq Rahman as further part of our SiC collaborations Rahman, A., Shepherd, P. D., Bhuyan, S. A., Ahmed, S., Akula, S. K., Caley, L.,Francis, A.M. Holmes, J. A. (2015). A family of CMOS analog and mixed signal circuits in SiC for high temperature electronics. In Aerospace Conference, 2015 IEEE […]



