Publications, Research

SiC under pressure – best of session at IMAPS 2017

Dr. Matthew Barlow, Ozark IC Senior Engineer, was selected as “Best in Session” for his paper, “Operation of Silicon Carbide Integrated Circuits under High Temperature and Pressure.”  Congrats Matt! Abstract Silicon carbide integrated circuits have demonstrated the ability to function at temperatures as high as 600 ℃ for extended periods of time. Many environments where high temperature in-situ electronics are desired also have large pressures as well. While some validation has been done for high pressure environments, limited information on the parametric impact of pressure on SiC integrated circuits is available. This paper takes two leading-edge SiC integrated circuit processes using two different classes of devices (JFET and CMOS), and measures the performance through temperature and pressure variation. Circuit functionality […]

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Visit Ozark IC at the Fayetteville “Startup Crawl”

Ozark IC is excited to participate in the Fayetteville Startup Crawl!  The Startup Crawl is the biggest startup party of the year highlighting the Downtown Innovation District in the Startup City of the South. Everyone is invited to come out and tour local startups at this incredible, one-night celebration of technology and entrepreneurship! Get ready to crawl your way through Fayetteville and experience fun, food, live music, and the best that the City has to offer. Local breweries will be set up at every stop! Register today!  https://www.eventbrite.com/e/startup-crawl-tickets-36490104886  

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Ozark IC announces new projects with the US Air Force and Department of Energy

Ozark Integrated Circuits Inc., a technology firm located in the Arkansas Research and Technology Park at the University of Arkansas, has received a $750,000 award from the U.S. Air Force. The grant is to develop electronics packaging and assembly systems for controls in jet engines. The controls can operate at temperatures up to 300 degrees Celsius. The Fayetteville-based company will continue collaborating with researchers at the University of Arkansas’ High Density Electronics Center, or HiDEC, also located at the technology park. U of A researchers involved in the project are Simon Ang, HiDEC director and professor of electrical engineering; and Silke Spiesshoefer, clinical assistant professor of electrical engineering. Read More…. https://www.newswise.com/articles/ozark-integrated-circuits-receives-750-000-award-from-air-force http://www.arkansasonline.com/news/2017/jul/19/news-in-brief-20160719/?f=business http://news.uark.edu/articles/39133/ozark-integrated-circuits-receives-750-000-award-from-air-force

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Engineering the Future – Ozark IC on Startup Junkies Podcast

94: Engineering the Future with Ozark IC Jul 17, 2017 If you like engineering, then you’re going to love this one! This week we welcome Matt & Jim from Ozark IC. We discuss their work with semiconductors, and how the future is powered by engineering. Their company has received grants from NASA, so they know what they’re talking about. Read more at http://startupjunkie.libsyn.com/94-engineering-the-future-with-ozark-ic#LSgllT0rViRqtxUB.99  

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See you at OTC 2017!

Come visit us at the NASA booth (5318) at the Offshore Technology Conference • 1-4 May 2017 • NRG Park • Houston, Texas, USA.  Ozark IC CTO Jim Holmes will be attending this week to discuss Ozark IC’s SiC technologies for downhole exploration.  

Publications

High Temperature Data Converters in Silicon Carbide CMOS

Congrats to Ashfaq Rahman (PhD student of Dr. Alan Mantooth), a member of the U of A/Ozark IC design team from the Building Innovation Capacity NSF collaboration on his new paper, “High Temperature Data Converters in Silicon Carbide CMOS,” that has been posted to the “Early Access” area on IEEEXplore! Rahman, A., Caley, L., Roy, S., Kuhns, N., Mantooth, A., Di, J., … Holmes, J. (2017). High Temperature Data Converters in Silicon Carbide CMOS. IEEE Transactions on Electron Devices, 64(4), 1426–1432. https://doi.org/10.1109/TED.2017.2665520

Publications

Extended High-Temperature Operation of Silicon Carbide CMOS Circuits for Venus Surface Application

Ozark IC’s work in Silicon Carbide CMOS integrated circuits was recently featured in the IMAPS Journal of Microelectronics and Electronic Packaging Extended High-Temperature Operation of Silicon Carbide CMOS Circuits for Venus Surface Application Journal of Microelectronics and Electronic Packaging, October 2016 Issue  A. Matthew Francis, Jim Holmes,Nick Chiolino,Ian Getreu, Matthew Barlow, Affan Abbasi, and H. Alan Mantooth