Ozark IC selected by DOE for a $1.1M SBIR Phase II award to Develop High-Temperature Communication Electronics for Directional Drilling

FOR IMMEDIATE RELEASE Contact: Dr. Ian Getreu, Director, Business Development Phone: +1 (503) 888-2372 Email:  Getreu@OzarkIC.com The $1.1M 2-year Small Business Innovation Research (SBIR) Department of Energy Phase II award will enhance Ozark IC’s high-temperature platform family while targeting directional drilling in geothermal wells   FAYETTEVILLE, ARKANSAS July 2020 – The objective of this project is a communication drill pipe system that supports directional drilling in high temperature geothermal wells by providing computational power at the drill head and linking it to a control base at the surface. There is as much as 200,000 exojoules in untapped, carbon-free energy available from geothermal resources, which is 2,000 times the annual consumption of primary energy consumed in the U.S.[1] Accessing these geothermal […]

Ozark IC to Continue Ultra-High-Temperature Processor Development for NASA

FOR IMMEDIATE RELEASE Contact: Dr. Ian Getreu, Director, Business Development Phone: +1 (503) 888-2372 Email:  Getreu@OzarkIC.com FAYETTEVILLE, ARKANSAS May 2020 – Ozark Integrated Circuits Inc. (Ozark IC) in Fayetteville, AR was selected for a $750k, two-year Phase II R&D awards from NASA. The award will allow Ozark IC to develop a high-temperature packaging and multi-chip processor system capable of long-term operation at 500oC (nearly 900 degrees F) – a vital component for Venus exploration and many other applications, such as military/aerospace companies addressing jet and hypersonic engine needs.

A picture of the article abstract

An Integrated SiC Photo-Transistor for Ultraviolet Detection in High-Temperature Environments

Jim Holmes, A. Matt Francis, Nicholas Chiolino, Matthew Barlow, Sonia Perez, Ian Getreu Ozark Integrated Circuits, Inc. Fayetteville, Arkansas, USA Email: holmes@ozarkic.com Article published in IEEE Sensor Applications Symposium (SAS), March 2019. Abstract— The work described herein applies a patented integrated silicon carbide (SiC) bipolar junction transistor (BJT) to the detection of ultraviolet (UV) light in situ for extreme-temperature environments. An integrated SiC BJT provides four important capabilities for UV detection in extreme environments: (1) The miniaturization of detectors and readout circuits through micron-scaled integrated circuit (IC) lithography; (2) the high-temperature operation of SiC ICs; (3) long-term reliability of SiC at high temperatures; and (4) the deep-UV responsivity of 4H-SiC. The design, manufacture and electrical characterization of a SiC photo-transistor […]

Ozark IC is at GOMAC Tech!

Ozark IC is attending the 2019 Government Microcircuit Applications and Critical Technology Conference in Albuquerque, NM this week March (25-28, 2019) .  Attending?  If you have interest in setting up a one on one, please email info@ozarkic.com to make an appointment to discuss high temperature electronics, packaging and test.