See you at OTC 2017!
Come visit us at the NASA booth (5318) at the Offshore Technology Conference • 1-4 May 2017 • NRG Park • Houston, Texas, USA. Ozark IC CTO Jim Holmes will be attending this week to discuss Ozark IC’s SiC technologies … Read More
High Temperature Data Converters in Silicon Carbide CMOS
Congrats to Ashfaq Rahman (PhD student of Dr. Alan Mantooth), a member of the U of A/Ozark IC design team from the Building Innovation Capacity NSF collaboration on his new paper, “High Temperature Data Converters in Silicon Carbide CMOS,” that has … Read More
Extended High-Temperature Operation of Silicon Carbide CMOS Circuits for Venus Surface Application
Ozark IC’s work in Silicon Carbide CMOS integrated circuits was recently featured in the IMAPS Journal of Microelectronics and Electronic Packaging Extended High-Temperature Operation of Silicon Carbide CMOS Circuits for Venus Surface Application Journal of Microelectronics and Electronic Packaging, October 2016 … Read More
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A Design Kit for High Temperature ASIC and LTCC Co-Design
Ozark IC’s work in advanced packaging for high-temperature integrated circuits was a feature in the November/December issue of Advancing Microelectronics Magazine (an IMAPS publiction). A Design Kit for High Temperature ASIC and LTCC Co-Design Jim Holmes, A. Matt Francis, Ian … Read More
Conference: WIPDA 2016 – SiC-CMOS Digital Circuits and More
Ozark IC attended the 2016 Workshop on Wide Bandgap Power Devices and Applications in Fayetteville, AR, November 2016. In addition to our booth, Matthew Barlow, Ozark IC Engineer, presented a hardware demonstration of a SiC-based power converter using Venus-tested circuits. Barlow, … Read More
An ntegrated SiC CMOS Gate Driver
A great article on the state of the art in silicon-carbide integrated circuit design for power electronics, presented by Prof. Mantooth’s U of A student (and now Ozark IC Engineer) Matthew Barlow at the 2016 IEEE Applied Power Electronics Conference. … Read More
High-Temperature Voltage and Current References in Silicon Carbide CMOS
A great paper led by Ashfaq Rahman, PhD, U of A 2015 graduate of Prof. Mantooth’s, on design of voltage and current references in Silicon Carbide. Rahman, A., Francis, A. M., Ahmed, S., Akula, S. K., Holmes, J., & Mantooth, … Read More
Complex High-Temperature CMOS Silicon Carbide Digital Circuit Designs
A publication on the design and test of asynchronous silicon-carbide integrated circuits, led by U of A student Nathan Kuhns (student of Prof. Di) in the 2016 issue of IEEE Transactions on Device and Materials Reliability. Kuhns, N., Caley, L., … Read More
