Silicon Carbide CMOS
Ozark IC utilizes Silicon Carbide CMOS technology to design the most dense, low-power circuits that can operate across a 500°C temperature range.
- Scalable from gate drivers to microcontrollers
- Best digital/analog/mixed-signal design expertise
- Designs from -180°C to 500°C
- Proven specification-driven design approach for 1st pass success
- More than design – complete design solutions from chip to board, module, assembly, packaging and test
Silicon Carbide JFET-R
Ozark IC designs the highest temperature integrated circuits in the world using Silicon Carbide JFET-R technology.
- Take measurements in-situ at incredible temperatures, up to 600°C
- Ozark IC has the best JFET models and digital/analog/mixed-signal design expertise
- Designs from -180°C to 600°C
- Proven specification-driven design approach for 1st pass success
- More than design - complete design solutions from chip to board, module, assembly, packaging and test
