Silicon Carbide CMOS

Ozark IC utilizes Silicon Carbide CMOS technology to design the most dense, low-power circuits that can operate across a 500°C temperature range.

  • Scalable from gate drivers to microcontrollers
  • Best digital/analog/mixed-signal design expertise
  • Designs from -180°C to 500°C
  • Proven specification-driven design approach for 1st pass success
  • More than design – complete design solutions from chip to board, module, assembly, packaging and test

Silicon Carbide JFET-R

Ozark IC designs the highest temperature integrated circuits in the world using Silicon Carbide JFET-R technology.

  • Take measurements in-situ at incredible temperatures, up to 600°C
  • Ozark IC has the best JFET models and digital/analog/mixed-signal design expertise
  • Designs from -180°C to 600°C
  • Proven specification-driven design approach for 1st pass success
  • More than design - complete design solutions from chip to board, module, assembly, packaging and test