High Temperature

Silicon Carbide CMOS

Ozark IC  designs the most dense, low-power circuits that can operate across a 500oC temperature range using Silicon Carbide CMOS technology.

• Scalable from gate drivers to microcontrollers
• Best digital/analog/mixed-signal design expertise
• Designs from -180oC to 500oC
• Proven specification-driven design approach for 1st pass success
• More than design – complete design solutions from chip to board, module, assembly, packaging and test

A HARSH Environment: Venus surface temperature can be as high as 500 C and 100 bar of pressure. Photo - Courtesy NASA

Silicon Carbide clock generator circuit after 105 hours of operation at 470 C.

Silicon Carbide JFET-R

Ozark IC designs the highest temperature integrated circuits in the world using Silicon Carbide JFET-R technology.

• Take measurements in-situ at incredible temperatures, up to 600 C
• Ozark IC has the best JFET models and digital/analog/mixed-signal design expertise
• Designs from -180 C to 600 C
• Proven specification-driven design approach for 1st pass success
• More than design - complete design solutions from chip to board, module, assembly, packaging and test

Ozark IC has a unique capability to design SiC ASICs using NASA's JFET-R Integrated Circuit process