An Integrated SiC CMOS Gate Driver
A great article on the state of the art in silicon-carbide integrated circuit design for power electronics, presented by Prof. Mantooth’s U […]
Author: ozadmin
High-Temperature Voltage and Current References in Silicon Carbide CMOS
A great paper led by Ashfaq Rahman, PhD, U of A 2015 graduate of Prof. Mantooth’s, on design of voltage and current […]
Complex High-Temperature CMOS Silicon Carbide Digital Circuit Designs
A publication on the design and test of asynchronous silicon-carbide integrated circuits, led by U of A student Nathan Kuhns (student of […]
Conference: 2016 High Temperature Electronics Conference
Ozark IC attended the 2016 IMAPS High Temperature Electronics Conference in Albuquerque, NM. Three papers were featured by Ozark IC and it’s […]
Press: Ozark IC Venus-focused R&D Featured in EETimes
NASA Preps Venus ICs. Ozark IC to supply 932 degree PDK. R. Colin Johnson. 8/3/2015 09:50 AM ED
Aerospace 2015, SiC CMOS, SiGe
Ozark IC’s work in design and qualification of silicon carbide technology was featured at the 2015 Aerospace Conference. Francis, A. M., Moudy, […]