A great paper led by Ashfaq Rahman, PhD, U of A 2015 graduate of Prof. Mantooth’s, on design of voltage and current references in Silicon Carbide. Rahman, A., Francis, A. M., Ahmed, S., Akula, S. K., Holmes, J., & Mantooth, … Read More
A publication on the design and test of asynchronous silicon-carbide integrated circuits, led by U of A student Nathan Kuhns (student of Prof. Di) in the 2016 issue of IEEE Transactions on Device and Materials Reliability. Kuhns, N., Caley, L., … Read More
Ozark IC attended the 2016 IMAPS High Temperature Electronics Conference in Albuquerque, NM. Three papers were featured by Ozark IC and it’s partners at the University of Arkansas: Francis, A. M., Holmes, J., Chiolino, N., Barlow, M., Abbasi, A., & … Read More
NASA Preps Venus ICs. Ozark IC to supply 932 degree PDK. R. Colin Johnson. 8/3/2015 09:50 AM ED
Ozark IC’s work in design and qualification of silicon carbide technology was featured at the 2015 Aerospace Conference. Francis, A. M., Moudy, T., Holmes, J. A., Rahman, A., Barlow, M., Ahmed, S., & Mantooth, A. (2015). Towards standard component parts … Read More
