Author: ozadmin

Publications

An Integrated SiC CMOS Gate Driver

A great article on the state of the art in silicon-carbide integrated circuit design for power electronics, presented by Prof. Mantooth’s U of A student (and now Ozark IC Engineer) Matthew Barlow at the 2016 IEEE Applied Power Electronics Conference. Barlow, M., Ahmed, S., Mantooth, H. A., & Francis, A. M. (2016). An integrated SiC CMOS gate driver. In 2016 IEEE Applied Power Electronics Conference and Exposition (APEC) (pp. 1646–1649). https://doi.org/10.1109/APEC.2016.7468087

Publications

High-Temperature Voltage and Current References in Silicon Carbide CMOS

A great paper led by Ashfaq Rahman, PhD, U of A 2015 graduate of Prof. Mantooth’s, on design of voltage and current references in Silicon Carbide. Rahman, A., Francis, A. M., Ahmed, S., Akula, S. K., Holmes, J., & Mantooth, A. (2016). High-Temperature Voltage and Current References in Silicon Carbide CMOS. IEEE Transactions on Electron Devices, 63(6), 2455–2461. https://doi.org/10.1109/TED.2016.2550580

Publications

Complex High-Temperature CMOS Silicon Carbide Digital Circuit Designs

A publication on the design and test of asynchronous silicon-carbide integrated circuits, led by U of A student Nathan Kuhns (student of Prof. Di) in the 2016 issue of  IEEE Transactions on Device and Materials Reliability. Kuhns, N., Caley, L., Rahman, A., Ahmed, S., Di, J., Mantooth, H. A., Francis, A.M, Holmes, J. (2016). Complex High-Temperature CMOS Silicon Carbide Digital Circuit Designs. IEEE Transactions on Device and Materials Reliability, 16(2), 105–111. https://doi.org/10.1109/TDMR.2016.2530664

Uncategorized

Conference: 2016 High Temperature Electronics Conference

Ozark IC attended the 2016 IMAPS High Temperature Electronics Conference in Albuquerque, NM.  Three papers were featured by Ozark IC and it’s partners at the University of Arkansas: Francis, A. M., Holmes, J., Chiolino, N., Barlow, M., Abbasi, A., & Mantooth, H. A. (2016). High-Temperature Operation of Silicon Carbide CMOS Circuits for Venus Surface Application. In IMAPS High Temperature Electronics Conference (HiTEC) (pp. 242–248). http://www.imapsource.org/doi/abs/10.4071/2016-HITEC-242 Selected for expanded journal article, Journal of Microelectronics and Packaging! Benavides, M. R., Castillo, A. N., Rahman, A., Barlow, M., Abreu, D., Rowlett, C., Holmes, J. A. (2016). Low Power Silicon Carbide RS-485 Transceiver. In 2016 High Temperature Electronics Conference (HiTEC) (pp. 257–262). https://doi.org/10.4071/2016-HITEC-257 Murphree, R. C., Ahmed, S., Barlow, M., Rahman, A., Mantooth, H. A., […]

Conferences, Publications

Aerospace 2015, SiC CMOS, SiGe

Ozark IC’s work in design and qualification of silicon carbide technology was featured at the 2015 Aerospace Conference. Francis, A. M., Moudy, T., Holmes, J. A., Rahman, A., Barlow, M., Ahmed, S., & Mantooth, A. (2015). Towards standard component parts in silicon carbide CMOS. In 2015 IEEE Aerospace Conference (pp. 1–9). https://doi.org/10.1109/AERO.2015.7119291 Dr. Alan Mantooth, of the University of Arkansas also presented a paper on SiC analog/mixed-signal designs done by student Ashfaq Rahman as further part of our SiC collaborations Rahman, A., Shepherd, P. D., Bhuyan, S. A., Ahmed, S., Akula, S. K., Caley, L.,Francis, A.M. Holmes, J. A. (2015). A family of CMOS analog and mixed signal circuits in SiC for high temperature electronics. In Aerospace Conference, 2015 IEEE […]