Author: ozadmin

Press Releases

Ozark IC to Continue Ultra-High-Temperature Processor Development for NASA

FOR IMMEDIATE RELEASE Contact: Dr. Ian Getreu, Director, Business Development Phone: +1 (503) 888-2372 Email:  Getreu@OzarkIC.com FAYETTEVILLE, ARKANSAS May 2020 – Ozark Integrated Circuits Inc. (Ozark IC) in Fayetteville, AR was selected for a $750k, two-year Phase II R&D awards from NASA. The award will allow Ozark IC to develop a high-temperature packaging and multi-chip processor system capable of long-term operation at 500oC (nearly 900 degrees F) – a vital component for Venus exploration and many other applications, such as military/aerospace companies addressing jet and hypersonic engine needs.

A picture of the article abstract
Publications

An Integrated SiC Photo-Transistor for Ultraviolet Detection in High-Temperature Environments

Jim Holmes, A. Matt Francis, Nicholas Chiolino, Matthew Barlow, Sonia Perez, Ian Getreu Ozark Integrated Circuits, Inc. Fayetteville, Arkansas, USA Email: holmes@ozarkic.com Article published in IEEE Sensor Applications Symposium (SAS), March 2019. Abstract— The work described herein applies a patented integrated silicon carbide (SiC) bipolar junction transistor (BJT) to the detection of ultraviolet (UV) light in situ for extreme-temperature environments. An integrated SiC BJT provides four important capabilities for UV detection in extreme environments: (1) The miniaturization of detectors and readout circuits through micron-scaled integrated circuit (IC) lithography; (2) the high-temperature operation of SiC ICs; (3) long-term reliability of SiC at high temperatures; and (4) the deep-UV responsivity of 4H-SiC. The design, manufacture and electrical characterization of a SiC photo-transistor […]

Conferences

Ozark IC is at GOMAC Tech!

Ozark IC is attending the 2019 Government Microcircuit Applications and Critical Technology Conference in Albuquerque, NM this week March (25-28, 2019) .  Attending?  If you have interest in setting up a one on one, please email info@ozarkic.com to make an appointment to discuss high temperature electronics, packaging and test.

Publications, Research

SiC under pressure – best of session at IMAPS 2017

Dr. Matthew Barlow, Ozark IC Senior Engineer, was selected as “Best in Session” for his paper, “Operation of Silicon Carbide Integrated Circuits under High Temperature and Pressure.”  Congrats Matt! Abstract Silicon carbide integrated circuits have demonstrated the ability to function at temperatures as high as 600 ℃ for extended periods of time. Many environments where high temperature in-situ electronics are desired also have large pressures as well. While some validation has been done for high pressure environments, limited information on the parametric impact of pressure on SiC integrated circuits is available. This paper takes two leading-edge SiC integrated circuit processes using two different classes of devices (JFET and CMOS), and measures the performance through temperature and pressure variation. Circuit functionality […]