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Silicon Carbide CMOS Ozark IC utilizes Silicon Carbide CMOS technology to design the most dense, low-power circuits that can operate across a 500°C temperature range. Scalable from gate drivers to microcontrollers Best digital/analog/mixed-signal design expertise Designs from -180°C to 500°C … Read More
Ozark IC’s work in advanced packaging for high-temperature integrated circuits was a feature in the November/December issue of Advancing Microelectronics Magazine (an IMAPS publiction). A Design Kit for High Temperature ASIC and LTCC Co-Design Jim Holmes, A. Matt Francis, Ian … Read More
Ozark IC attended the 2016 Workshop on Wide Bandgap Power Devices and Applications in Fayetteville, AR, November 2016. In addition to our booth, Matthew Barlow, Ozark IC Engineer, presented a hardware demonstration of a SiC-based power converter using Venus-tested circuits. Barlow, … Read More
A great article on the state of the art in silicon-carbide integrated circuit design for power electronics, presented by Prof. Mantooth’s U of A student (and now Ozark IC Engineer) Matthew Barlow at the 2016 IEEE Applied Power Electronics Conference. … Read More
A great paper led by Ashfaq Rahman, PhD, U of A 2015 graduate of Prof. Mantooth’s, on design of voltage and current references in Silicon Carbide. Rahman, A., Francis, A. M., Ahmed, S., Akula, S. K., Holmes, J., & Mantooth, … Read More
A publication on the design and test of asynchronous silicon-carbide integrated circuits, led by U of A student Nathan Kuhns (student of Prof. Di) in the 2016 issue of IEEE Transactions on Device and Materials Reliability. Kuhns, N., Caley, L., … Read More
Ozark IC attended the 2016 IMAPS High Temperature Electronics Conference in Albuquerque, NM. Three papers were featured by Ozark IC and it’s partners at the University of Arkansas: Francis, A. M., Holmes, J., Chiolino, N., Barlow, M., Abbasi, A., & … Read More
