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Ozark IC is your provider for rugged system solutions for all environments; from consumer grade to extreme duty.  Please browse each section to learn more about our capabilities. Follow us  

High Temperature
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Silicon Carbide CMOS Ozark IC  designs the most dense, low-power circuits that can operate across a 500oC temperature range using Silicon Carbide CMOS technology.Scalable from gate drivers to microcontrollersBest digital/analog/mixed-signal design expertiseDesigns from -180oC to 500oCProven specification-driven design approach for … Read More

Conference: WIPDA 2016 – SiC-CMOS Digital Circuits and More
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Ozark IC attended the 2016 Workshop on Wide Bandgap Power Devices and Applications in Fayetteville, AR, November 2016.  In addition to our booth, Matthew Barlow, Ozark IC Engineer, presented a hardware demonstration of a  SiC-based power converter using Venus-tested circuits. Barlow, … Read More

Publication: An integrated SiC CMOS gate driver
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A great article on the state of the art in silicon-carbide integrated circuit design for power electronics, presented by Prof. Mantooth’s U of A student (and now Ozark IC Engineer) Matthew Barlow at the 2016 IEEE Applied Power Electronics Conference. … Read More