Ozark IC is your provider for rugged system solutions for all environments; from consumer grade to extreme duty.  Please browse each section to learn more about our capabilities. Follow us  

High Temperature

Silicon Carbide CMOS Ozark IC  designs the most dense, low-power circuits that can operate across a 500oC temperature range using Silicon Carbide CMOS technology.Scalable from gate drivers to microcontrollersBest digital/analog/mixed-signal design expertiseDesigns from -180oC to 500oCProven specification-driven design approach for … Read More

Conference: WIPDA 2016 – SiC-CMOS Digital Circuits and More

Ozark IC attended the 2016 Workshop on Wide Bandgap Power Devices and Applications in Fayetteville, AR, November 2016.  In addition to our booth, Matthew Barlow, Ozark IC Engineer, presented a hardware demonstration of a  SiC-based power converter using Venus-tested circuits. Barlow, … Read More

Publication: An integrated SiC CMOS gate driver

A great article on the state of the art in silicon-carbide integrated circuit design for power electronics, presented by Prof. Mantooth’s U of A student (and now Ozark IC Engineer) Matthew Barlow at the 2016 IEEE Applied Power Electronics Conference. … Read More