Publication: High Temperature Data Converters in Silicon Carbide CMOS

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Congrats to Ashfaq Rahman (PhD student of Dr. Alan Mantooth), a member of the U of A/Ozark IC design team from the Building Innovation Capacity NSF collaboration on his new paper, “High Temperature Data Converters in Silicon Carbide CMOS,” that has been posted to the “Early Access” area on IEEEXplore!

Rahman, A., Caley, L., Roy, S., Kuhns, N., Mantooth, A., Di, J., … Holmes, J. (2017). High Temperature Data Converters in Silicon Carbide CMOS. IEEE Transactions on Electron Devices, 64(4), 1426–1432. https://doi.org/10.1109/TED.2017.2665520

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