Publication: High-Temperature Voltage and Current References in Silicon Carbide CMOS

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A great paper led by Ashfaq Rahman, PhD, U of A 2015 graduate of Prof. Mantooth’s, on design of voltage and current references in Silicon Carbide. Rahman, A., Francis, A. M., Ahmed, S., Akula, S. K., Holmes, J., & Mantooth, A. (2016). High-Temperature Voltage and Current References in Silicon Carbide CMOS. IEEE Transactions on Electron […]

Publication: Complex High-Temperature CMOS Silicon Carbide Digital Circuit Designs

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A publication on the design and test of asynchronous silicon-carbide integrated circuits, led by U of A student Nathan Kuhns (student of Prof. Di) in the 2016 issue of ┬áIEEE Transactions on Device and Materials Reliability. Kuhns, N., Caley, L., Rahman, A., Ahmed, S., Di, J., Mantooth, H. A., Francis, A.M, Holmes, J. (2016). Complex […]