Publication – SiC under pressure – best of session at IMAPS 2017

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Dr. Matthew Barlow, Ozark IC Senior Engineer, was selected as “Best in Session” for his paper, “Operation of Silicon Carbide Integrated Circuits under High Temperature and Pressure.”  Congrats Matt! Abstract Silicon carbide integrated circuits have demonstrated the ability to function at temperatures as high as 600 ℃ for extended periods of time. Many environments where […]