Publication – SiC under pressure – best of session at IMAPS 2017

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Dr. Matthew Barlow, Ozark IC Senior Engineer, was selected as “Best in Session” for his paper, “Operation of Silicon Carbide Integrated Circuits under High Temperature and Pressure.”  Congrats Matt! Abstract Silicon carbide integrated circuits have demonstrated the ability to function at temperatures as high as 600 ℃ for extended periods of time. Many environments where […]

Visit Ozark IC at the Fayetteville “Startup Crawl”

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Ozark IC is excited to participate in the Fayetteville Startup Crawl!  The Startup Crawl is the biggest startup party of the year highlighting the Downtown Innovation District in the Startup City of the South. Everyone is invited to come out and tour local startups at this incredible, one-night celebration of technology and entrepreneurship! Get ready to crawl your way through […]

See you at OTC 2017!

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Come visit us at the NASA booth (5318) at the Offshore Technology Conference • 1-4 May 2017 • NRG Park • Houston, Texas, USA.  Ozark IC CTO Jim Holmes will be attending this week to discuss Ozark IC’s SiC technologies for downhole exploration.  

Publication: Extended High-Temperature Operation of Silicon Carbide CMOS Circuits for Venus Surface Application

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Ozark IC’s work in Silicon Carbide CMOS integrated circuits was recently featured in the IMAPS Journal of Microelectronics and Electronic Packaging Extended High-Temperature Operation of Silicon Carbide CMOS Circuits for Venus Surface Application Journal of Microelectronics and Electronic Packaging, October 2016 Issue  A. Matthew Francis, Jim Holmes,Nick Chiolino,Ian Getreu, Matthew Barlow, Affan Abbasi, and H. Alan Mantooth