See you at OTC 2017!

Posted Posted in Uncategorized

Come visit us at the NASA booth (5318) at the Offshore Technology Conference • 1-4 May 2017 • NRG Park • Houston, Texas, USA.  Ozark IC CTO Jim Holmes will be attending this week to discuss Ozark IC’s SiC technologies for downhole exploration.  

Publication: Extended High-Temperature Operation of Silicon Carbide CMOS Circuits for Venus Surface Application

Posted Posted in Uncategorized

Ozark IC’s work in Silicon Carbide CMOS integrated circuits was recently featured in the IMAPS Journal of Microelectronics and Electronic Packaging Extended High-Temperature Operation of Silicon Carbide CMOS Circuits for Venus Surface Application Journal of Microelectronics and Electronic Packaging, October 2016 Issue  A. Matthew Francis, Jim Holmes,Nick Chiolino,Ian Getreu, Matthew Barlow, Affan Abbasi, and H. Alan Mantooth

Conference: WIPDA 2016 – SiC-CMOS Digital Circuits and More

Posted Posted in Uncategorized

Ozark IC attended the 2016 Workshop on Wide Bandgap Power Devices and Applications in Fayetteville, AR, November 2016.  In addition to our booth, Matthew Barlow, Ozark IC Engineer, presented a hardware demonstration of a  SiC-based power converter using Venus-tested circuits. Barlow, M., Francis, A. M., Chiolino, N., Holmes, J., Abbasi, A., & Mantooth, H. A. (2016). […]

Publication: High-Temperature Voltage and Current References in Silicon Carbide CMOS

Posted Posted in Uncategorized

A great paper led by Ashfaq Rahman, PhD, U of A 2015 graduate of Prof. Mantooth’s, on design of voltage and current references in Silicon Carbide. Rahman, A., Francis, A. M., Ahmed, S., Akula, S. K., Holmes, J., & Mantooth, A. (2016). High-Temperature Voltage and Current References in Silicon Carbide CMOS. IEEE Transactions on Electron […]